8.4 volt temperatur e compensat ed zener reference diodes scottsd a l e division 1n3154 thru 1n3157, a, -1 w w w . mi c r o s e m i . c o m 1 n 3 1 5 4 - 1 n 3 1 5 7 a - 1 n 3 1 5 7 a descripti on appeara n c e the po pula r 1n31 54 thru 1n3 157a seri es of ze ro-tc reference dio d e s provide s a se lection of 8.4 v nominal vol t ages and te mperature co efficients to as low a s 0. 001 %/ o c for minimal voltage ch ang e with tempera t ure wh en operated at 10.0 ma. these gla ss a x ia l-lead ed do-7 referen c e diode s are also availabl e in ja n, jantx, and ja ntxv military qualifications. micro s emi also offers n u merou s oth e r ze ne r referen c e dio d e pro duct s for a variety of other voltage s from 6.2 v to 200 v. do-7 (do-204aa) import a n t : f o r the most cur r e n t data, consult mi c r os e m i ? s w e bsite: http:// www .microsemi.com features a p p l i c at ions / be ne fi ts ? jedec reg i ste r ed 1n 315 4 thr u 1n3 1 5 7 a ser i es ? standar d refer ence vo ltag e of 8.4v + / - 5% w i th tighter toler anc es avai lab l e ? 1n3 154, 3 155, 3156, a nd 31 5 7 also h a ve mil i tar y qua lificati on to mil-prf - 195 0 0 /158 u p to the jant xv level b y add in g jan, jant x, or jant xv prefi x es to part numbers as w e ll as ?-1? suffi x, e.g. jant x1n3 157 -1, etc. ? internal meta ll urgic a l bo nds ? jans equiv a le nt avail abl e via scd ? radi atio n har d ene d dev ices a v aila bl e b y c h a ngi ng 1n prefi x to r h , e.g. rh315 6, rh31 57, rh 315 7a, etc. also consult factor y for ? rh? data sh eet broch u re ? provid es mini mal volta ge ch ang es over a b r oad temperatur e ra nge ? f o r instrument ation a nd oth e r circuit desi gns requ irin g a stable vo ltag e referenc e ? maximum tem peratur e coeffi cient sel e ction s avail a b l e from 0.01%/oc to 0. 001 %/oc ? t i ght reference voltage tol e ra nces at the 8.4 v nomi nal is av ai labl e b y a ddi ng toleranc e 1%, 2%, 3%, etc. after the part num ber for identificati o n e.g. 1n3 156- 2%, 1 n 31 57a-1 %, 1 n 31 57-1- 1%, e t c. ? f l exibl e a x i a l-l ead mo unti ng termina ls ? nons ensitiv e to esd per mil - st d-750 method 1 0 2 0 max i mu m rat ing s mechan ic al an d pa ckagin g ? operatin g & storag et empera t ure: -65 o c to +175 o c ? dc po w e r d i ss ipati on: 500 m w @ t l = 25 o c and maximum curr ent i zm of 55 ma. not e : f o r optimum voltag e-temper ature stabi lit y , i z = 10.0 ma (less than 90 mw in dissi pated p o w e r) ? sold er temper atures: 260 o c for 10 s (max i mum) ? case: hermetically sealed glass case w i th do-7 (d o-2 0 4 aa) pa cka ge ? t e rminals: t i n-lead pl ated and sol der abl e per mil-st d-750, method 2 0 2 6 ? marking: part number an d cathod e ba nd ? polarit y : r e ferenc e di ode to be oper ated w i th the ban de d en d positiv e w i th respect to the opp osite e nd ? t ape & reel optio n: standa rd per eia-296 (add ?t r? suffix to part number) ? w e igh t : 0.2 grams. ? see pack a g e d i mensi ons o n l a st page m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 1 cop y right ? 200 3 8-20-2 003 rev a
8.4 volt temperatur e compensat ed zener reference diodes scottsd a l e division 1n3154 thru 1n3157, a, -1 w w w . mi c r o s e m i . c o m 1 n 3 1 5 4 - 1 n 3 1 5 7 a *electric a l ch ara cteri s tic s @ 25 o c, u n less otherwise specified zener vo lt a g e v z @ i zt (no t e 1) zener test curren t i zt ma x i m u m zener imped a n ce (no t e 2) z zt ma x i m u m reverse curren t i r @ 5.5 v vo lt a g e temper a t ure st a b ili t y (no t e 3 & 4 ) ? v zt ma x i m u m temper a t ure ra n g e effective temper a t ure coef ficien t vz jedec type numbers (no t es 1, 5 & 6) vo l t s m a o h m s a mv o c % / o c 1n3 154 1n3 154 a 8.00-8.8 0 8.00-8.8 0 10 10 15 15 10 10 130 172 -55 to + 100 -55 to + 150 0.01 0.01 1n3 155 1n3 155 a 8.00-8.8 0 8.00-8.8 0 10 10 15 15 10 10 65 86 -55 to + 100 -55 to + 150 0.005 0.005 1n3 156 1n3 156 a 8.00-8.8 0 8.00-8.8 0 10 10 15 15 10 10 26 34 -55 to + 100 -55 to + 150 0.002 0.002 1n3 157 1n3 157 a 8.00-8.8 0 8.00-8.8 0 10 10 15 15 10 10 13 17 -55 to + 100 -55 to + 150 0.001 0.001 *j ede c regis t ered data. notes: 1. w hen ordering d e vices w i th tighter tolerance than specifi ed, add a h y phen ated suffix to the p a rt num ber for desired to leranc e, e.g. 1n3 156 -2%, 1 n 3157a -1 %, 1n31 57-1 - 1% , etc. 2. measured b y sup e rimposing 1. 0 m a ac rms on 10 ma dc @ 25 o c. 3. the ma ximum allowable change o b served over the entire te mpe r atu r e rang e i.e., the diode voltage w ill not exceed t he specified mv cha nge at an y discrete temperat ure b e tween the estab lished lim its. 4. voltage measure m ents to be perf o rmed 15 secon d s after application of dc current. 5. the 1n3 154, 1n 3155, 1n31 56, a nd 1n3157 also have military qua lificat ion to mil-p r f-19 500/158 u p to the jantxv level by adding jan, jantx, or jantxv p r efix to pa rt num bers as w e ll as ?- 1? suffix, e.g. ja ntx1n31 56-1, j a ntxv1n315 7- 1, etc. 6. designate radiat ion hardene d de vices w i th ?rh? p r efix instead of ?i n?, i.e. rh3 157a instead of 1n31 57a. graphs change in tempe r ature coefficient (mv/ o c) the curve shown in figure 1 is typical of the diode series and greatly sim p lifies the estim a tion of the te m p e r atur e coefficient (tc ) when t he di ode is operated at currents othe r than 10 m a . exam ple: a di ode in this series is operated at a current of 10m a a nd has s pecified tem p er ature co efficient (tc ) lim its of +/-0.005% / o c. t o obtain the typical temperat ure coefficient lim its for this sam e diode oper at ed at a curr ent of 7.5m a, the new tc li m i ts (% / o c) can be estimated using the gr aph in figu re 1. a t a test current of 7.5 m a the cha nge in te m p e r at ure coefficient (tc ) is approximately ?0.0012%. o c. the algeb raic sum of +/ - 0.005% o c and ? 0 .0012%/ o c give s the new estim a ted lim its of +0.0038%/o c an d -0.0062 %/oc. change in tempe r ature coefficient (%/ o c) i z ? ope r ating curr ent (m a) figure 1 typical change of temperature coeffi cient with cha nge in operating curre nt. m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 2 cop y right ? 200 3 8-20-2 003 rev a
8.4 volt temperatur e compensat ed zener reference diodes m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 3 cop y right ? 200 3 8-20-2 003 rev a w w w . mi c r o s e m i . c o m scottsd a l e division 1n3154 thru 1n3157, a, -1 1 5 4 - 1 n 3 1 5 7 a - 1 n 3 1 5 7 a this curve in figure 2 illustrates the change of diode voltage arising from t he eff e ct of im pedance. it is in effect, an exploded view of the z e n e r ope rati ng region of th e i - v characteristic. in conjunction with figur e 1, t h is curve can be used to estim a te total voltage regu lation under conditions of both varying tem p er ature and current. ? v z ? ch ange in zener voltag e ( m v) i z ? ope r ating c u rrent (ma) figure 2 typical change of ze ner voltage with cha nge in operating current. dimen s io ns n 3 1 mm all dimensio n s i n i n c h
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